TC4423/TC4424/TC4425
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE (1)
8-Pin PDIP
1
2
3
4
5
6
7
8
8-Pin
DFN
1
2
3
4
5
6
7
8
PAD
16-Pin
SOIC
(Wide)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Symbol
NC
IN A
NC
GND
GND
NC
IN B
NC
NC
OUT B
OUT B
V DD
V DD
OUT A
OUT A
NC
NC
No connection
Input A
No connection
Ground
Ground
No connection
Input B
No connection
No connection
Output B
Output B
Supply input
Supply input
Output A
Output A
No connection
Exposed Metal Pad
Description
Note 1:
Duplicate pins must be connected for proper operation.
3.1
Inputs A and B
3.4
Ground (GND)
Inputs A and B are TTL/CMOS compatible inputs that
control outputs A and B, respectively. These inputs
have 300 mV of hysteresis between the high and low
input levels, allowing them to be driven from slow rising
and falling signals, and to provide noise immunity.
Ground is the device return pin. The ground pin(s)
should have a low-impedance connection to the bias
supply source return. High peak currents will flow out
the ground pin(s) when the capacitive load is being
discharged.
3.2
Outputs A and B
3.5
Exposed Metal Pad
Outputs A and B are CMOS push-pull outputs that are
capable of sourcing and sinking 3A peaks of current
(V DD = 18V). The low output impedance ensures the
gate of the external MOSFET will stay in the intended
state even during large transients. These outputs also
have a reverse current latch-up rating of 1.5A.
The exposed metal pad of the 6x5 DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other cop-
per plane on a printed circuit board to aid in heat
removal from the package.
3.3
Supply Input (V DD )
V DD is the bias supply input for the MOSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with a local ceramic capacitor.
This bypass capacitor provides a localized low-
impedance path for the peak currents that are to be
provided to the load.
? 2004 Microchip Technology Inc.
DS21421D-page 9
相关PDF资料
TC4427MJA IC MOSFET DVR 1.5A DUAL HS 8CDIP
TC4428VUA713 IC MOSFET DVR 1.5A DUAL HS 8MSOP
TC4429VPA IC MOSFET DRIVER 6A HS 8DIP
TC4432VOA713 IC MOSFET DRIVER 30V 1.5A 8SOIC
TC4452VPA IC MOSFET DVR 12A HS 8DIP
TC4467COE IC MOSFET DVR QUAD NAND 16SOIC
TC4627EOE IC MOSFET DRIVER 1.5A 16SOIC
TCN1.25SV THERMASHIELD CONVOLUTED 1.25" 4'
相关代理商/技术参数
TC4425VMF713 功能描述:功率驱动器IC 3A Dual RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC4425VOE 功能描述:功率驱动器IC 3A Dual RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC4425VOE713 功能描述:功率驱动器IC 3A Dual RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC4425VPA 功能描述:功率驱动器IC 3A Dual RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC4426 制造商:TELCOM 制造商全称:TelCom Semiconductor, Inc 功能描述:1.5A DUAL HIGH-SPEED, POWER MOSFET DRIVERS
TC4426_06 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1.5A Dual High-Speed Power MOSFET Drivers
TC4426_13 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1.5A Dual High-Speed Power MOSFET Drivers
TC4426A 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1.5A Dual High-Speed Power MOSFET Drivers